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The Definitive Guide To silicon carbide power devices

pennn963yrh2
SiC Characteristics 10x the breakdown electric powered field strength of silicon, which makes it probable to configure greater voltage (600V to thousands of V) power devices by way of a thinner drift layer and higher impurity focus. Given that almost all of the resistance component of higher-voltage devices is found https://www.pinterest.com/pin/1001488035878243572/
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